Charged particle beam writing apparatus and method thereof, and method for resizing dimension variation due to loading effect

A charged particle beam writing apparatus comprising:

• a writing time estimation calculating part configured, based on pattern data to be written in a writing region, to estimate a total writing time for writing the pattern data with a charged particle beam;
• a loading effect correction coefficient acquiring part configured to acquire a loading effect correction coefficient at an arbitrary time, after writing start time and within the total writing time, in writing using the pattern data, by using a correlation among a time having passed since the writing start time, the total writing time, and the loading effect correction coefficient;
• a dimension variation amount calculating part configured to calculate a dimension variation amount due to a loading effect at the arbitrary time by using the loading effect correction coefficient;
• a beam dose acquiring part configured to acquire a beam dose at the arbitrary time based on the dimension variation amount;
• a beam irradiation time calculating part configured to calculate a beam irradiation time of the charged particle beam at a position in the writing region, based on a acquired beam dose;
• a deflector configured to deflect the charged particle beam according to the beam irradiation time;
• and
• an aperture configured to block the charged particle beam deflected by the deflector.

A charged particle beam writing method comprising:

• inputting pattern data to be written in a writing region;
• estimating a total writing time for writing a pattern based on the pattern data;
• acquiring a base dose at an arbitrary time, after writing start time and within the total writing time, in writing using the pattern data, by using a first correlation among a time having passed since the writing start time, the total writing time, and the base dose;
• acquiring a fogging effect correction coefficient at the arbitrary time, in writing using the pattern data, by using a second correlation among the time having passed since the writing start time, the total writing time and the fogging effect correction coefficient;
• calculating a beam dose at the arbitrary time by using the base dose and the fogging effect correction coefficient;
• and
• writing a position in the writing region with the charged particle beam, according to the beam dose.

A charged particle beam writing method comprising:

• estimating a total writing time for writing a pattern to be written in a writing region, based on a pattern data;
• acquiring a loading effect correction coefficient at an arbitrary time, after writing start time and within the total writing time, in writing using the pattern data, by using a correlation among a time having passed since the writing start time, the total writing time, and the loading effect correction coefficient;
• calculating a dimension variation amount due to the loading effect at the arbitrary time by using the loading effect correction coefficient;
• obtaining a beam dose at the arbitrary time based on the dimension variation amount;
• and
• writing a position in the writing region with the charged particle beam, according to the beam dose.

A method for resizing a dimension variation amount comprising:

• estimating a total writing time for writing a pattern to be written in a writing region, based on a pattern data;
• acquiring a loading effect correction coefficient at an arbitrary time, after writing start time and within the total writing time, in writing using the pattern data, by using a correlation among a time having passed since the writing start time, the total writing time, and the loading effect correction coefficient;
• calculating a dimension variation amount due to the loading effect at the arbitrary time by using the loading effect correction coefficient;
• and
• resizing the pattern data according to an estimated time to be passed since the writing start time, based on the dimension variation amount and outputting resized pattern data.