Charged particle beam drawing apparatus

A charge particle beam drawing apparatus for drawing an integrated circuit pattern on a semiconductor sample, comprising:

• segment vector developing means that converts designed data of a polygon expressed in vectors to converted segment vector data, and said converted segment vector data contains attribute data which indicates on what sides segments of said converted segment vector data are located and segment data which indicates a start-point and end-point, wherein said designed data is used as a basis to draw said integrated circuit pattern on said semiconductor sample;
• ends separating means that separates two end data of the start-point and end-point from the segment data of said converted segment vector data;
• bitmapped data generating means that generates multi-valued bitmapped data greater than two-valued bitmapped data, by calculating from said end data, without generating the two-valued bitmapped data;
• exposure control means that controls a charged particle beam according to said multi-valued bitmapped data;
• and
• an optical system that irradiates said charged particle beam to expose said semiconductor sample by a raster scanning of said charged particle beam while said beam is being controlled by said exposure control means;
• wherein segments perpendicular to the raster scanning direction are omitted in said converted segment vector data.

A charged particle beam drawing apparatus for drawing an integrated circuit pattern on a semiconductor sample, comprising:

• segment vector developing means that converts designed data of a polygon expressed in vectors to converted segment vector data, and said converted segment vector data contains attribute data which indicates on what sides segments of said converted segment vector data are located and segment data which indicates a start-point and end-point, wherein said designed data serves as a basis to draw said integrated circuit pattern on said semiconductor sample;
• ends separating means that separates two end data of the start-point and end-point from the segment data of said converted segment vector data;
• bitmapped data generating means that generates multi-valued bitmapped data except for two-valued bitmapped data, by calculating an area rate from said end data, without generating the two-valued bitmapped data;
• exposure control means that controls a charged particle beam according to said multi-valued bitmapped data;
• and
• an optical system that irradiates said charged particle beam to expose said semiconductor sample by a raster scanning of said charged particle beam while said beam is being controlled by said exposure control means;
• wherein segments perpendicular to the raster scanning direction are omitted in said converted segment vector data.