High resolution integrated X-ray CMOS image sensor

An integrated X-ray image sensor comprising:

• a semiconductor wafer, wherein one or more pixels of an image sensor are located on a first surface of the semiconductor wafer, wherein the semiconductor wafer comprises:
• a semiconductor substrate;
• a buried insulating layer located over the semiconductor substrate;
• and
• a silicon island layer located over the buried insulating layer, wherein the one or more pixels are located in the silicon island layer;
• and
• one or more scintillator plugs located in one or more corresponding openings in a second surface of the semiconductor wafer, wherein the second surface is opposite the first surface, and wherein each of the one or more scintillator plugs includes scintillating material aligned with a corresponding one of the one or more pixels.

An integrated X-ray image sensor comprising:

• a semiconductor wafer, wherein one or more pixels of an image sensor are located on a first surface of the semiconductor wafer, wherein the semiconductor wafer comprises:
• a semiconductor substrate having a first conductivity type and a first dopant concentration;
• an epitaxial silicon layer located over the semiconductor substrate and having the first conductivity type and a second dopant concentration, different than the first dopant concentration;
• and
• one or more scintillator plugs located in one or more corresponding openings in a second surface of the semiconductor wafer, wherein the second surface is opposite the first surface, and wherein each of the one or more scintillator plugs includes scintillating material aligned with a corresponding one of the one or more pixels.