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US 7,608,833 B2Granted
Radiation image detector
AssigneeFUJIFILM Corporation
InventorsKaku Irisawa, Fumito Nariyuki, Kenichi Hayashi
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Abstract
A voltage applying electrode, to which a voltage is to be applied, a semiconductor layer, which is capable of generating electric charges when radiation is irradiated to the semiconductor layer, and an electrode for detecting an electric signal in accordance with a radiation dose are overlaid one upon another. A hole injection blocking layer is located between the voltage applying electrode and the semiconductor layer. The hole injection blocking layer contains an alloy of SbxS100-x, where x represents a number satisfying the condition of 41≦x≦60.
Claims6
A radiation image detector, comprising:
- i) a voltage applying electrode, to which a voltage is to be applied,
- ii) a semiconductor layer, which is capable of generating electric charges when radiation is irradiated to the semiconductor layer, and
- iii) an electrode for detecting an electric signal in accordance with a radiation dose,
- the voltage applying electrode, the semiconductor layer, and the electrode for detecting the electric signal being overlaid one upon another,
- an image signal in accordance with the electric charges, which have been generated in the semiconductor layer, being read out from the radiation image detector,
- wherein a hole injection blocking layer is located between the voltage applying electrode and the semiconductor layer, and
- the hole injection blocking layer contains an alloy of SbxS100-x, where x represents a number satisfying the condition of 41≦x≦60.
4 more elements
Dependencies are inferred from the claim text.