Image pickup device, vision enhancement apparatus, night-vision apparatus, navigation support apparatus, and monitoring apparatus
AssigneeSumitomo Electric Industries, Ltd.
InventorsYouichi Nagai, Yasuhiro Iguchi, Hiroshi Inada
Life of this patent
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Abstract
There is provided an image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object and which has semiconductor photodetectors including an absorption layer of a bandgap wavelength in the range of 1.65 to 3.0 μm.
Claims17
An image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object, the image pickup device comprising semiconductor photodetectors which include an absorption layer having a bandgap wavelength in the range of 1.65 to 3.0 μm, wherein the semiconductor photodetectors further include an InP substrate, the absorption layer is formed on the InP substrate and includes a GaInNAsP layer, and the concentration of P of the GaInNAsP layer is in the range of 0.01 to 1 atomic percent.
An image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object, the image pickup device comprising semiconductor photodetectors which include an absorption layer having a bandgap wavelength in the range of 1.65 to 3.0 μm, wherein the semiconductor photodetectors further include an InP substrate, the absorption layer is formed on the InP substrate and includes a GaInNAsSb layer, and the concentration of Sb of the GaInNAsSb layer is in the range of 0.1 to 10 atomic percent.
An image pickup device which picks up an image of an object by absorbing light in a near infrared region reflected from the object, the image pickup device comprising semiconductor photodetectors which include an absorption layer having a bandgap wavelength in the range of 1.65 to 3.0 μm, wherein the semiconductor photodetectors further include an InP substrate, the absorption layer is formed on the InP substrate and includes a GaInNAs layer, and the concentration of N of the GaInNAs layer is in the range of 0.01 to 12 atomic percent.
Dependencies are inferred from the claim text.