US 7,608,544 B2 · Etching method and storage medium

Abstract

An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is executed by a substrate processing apparatus that performs plasma processing on a semiconductor wafer by plasma. The apparatus comprises a substrate accommodating chamber for accommodating the semiconductor wafer which has an oxide film and a resist film formed on the oxide film, and an upper electrode plate disposed in the substrate accommodating chamber and exposed in a processing space in the substrate accommodating chamber. At least part of the upper electrode plate is formed of a silicon-containing material. The upper electrode plate is sputtered by plasma, and the oxide film is etched by plasma.

Claims11

Dependent claims

An etching method which is executed by a substrate processing apparatus that includes an accommodating chamber for accommodating a substrate including an oxide film and a resist film formed on the oxide film, and an exposed member disposed in the accommodating chamber and exposed to a space in the accommodating chamber, and performs plasma processing on the substrate by plasma generated in the accommodating chamber, at least part of the exposed member being formed of a silicon-containing material,

the etching method comprising:
a sputtering step of sputtering the exposed member by plasma to form a silicon-containing film on the resist film;
and
an oxide film etching step of etching the oxide film by plasma, using the resist film and the silicon-containing film as etching masks.

1 more element

Dependencies are inferred from the claim text.

Etching method and storage medium

Life of this patent

Etching method and storage medium

Life of this patent

Abstract

Claims11