Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition

A method of manufacturing a semiconductor device, comprising:

• forming a layer on a substrate;
• forming a photoresist pattern on the layer, the photoresist pattern exposing a portion of the layer;
• etching the layer using the photoresist pattern as an etching mask to form a layer pattern on the substrate;
• and
• removing the photoresist pattern and etching residues from the substrate and the layer pattern by applying a composition which includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and water,
• wherein the alcoholamide compound is chemically structured as follows:
• where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.