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US 7,608,530 B2Granted
Hetero-crystalline structure and method of making same
AssigneeHewlett-Packard Development Company, L.P.
InventorsNobuhiko Kobayashi, Shih Yuan Wang
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Abstract
A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.
Claims15
A method of making a hetero-crystalline structure comprising:
- forming a first layer of a non-single crystalline material on a substrate surface, the non-single crystalline material having short range atomic ordering;
- and
- growing a nanostructure of a single-crystalline material on the first layer integral to a crystallite in the first layer, wherein the nanostructure is grown using catalyst-free epitaxial growth.
A method of making a hetero-crystalline device structure comprising:
- forming a first layer of a non-single crystalline material having short range atomic ordering;
- depositing a mask layer on a surface of the first layer;
- patterning the mask layer to expose a discrete portion of the first layer surface through an opening in the mask layer, the discrete portion corresponding to a crystallite in the first layer;
- and
- growing a nanostructure of a single-crystalline material in the opening integral to a crystallite in the first layer using catalyst-free selective epitaxial growth.
2 more elements
Dependencies are inferred from the claim text.