Strained layers within semiconductor buffer structures
AssigneesASM America, Inc., S.O.I. Tec Silicon on Insulator Technologies
InventorsNyles W. Cody, Christophe Figuet, Mark Kennard
Life of this patent
Estimating the term…
Abstract
A semiconductor workpiece including a substrate, a relaxed buffer layer including a graded portion formed on the substrate, and at least one strained transitional layer within the graded portion of the relaxed buffer layer and method of manufacturing the same. The at least one strained transitional layer reduces an amount of workpiece bow due to differential coefficient of thermal expansion (CTE) contraction of the relaxed buffer layer relative to CTE contraction of the substrate
Claims39
A method of manufacturing a semiconductor workpiece, the method comprising:
- providing a substrate;
- depositing a relaxed buffer layer on the substrate;
- and
- during depositing the relaxed buffer layer, depositing at least one strained transitional layer wherein depositing the relaxed buffer layer comprises depositing silicon and germanium in an epitaxial deposition reactor, wherein depositing the relaxed buffer layer comprises:
- depositing a first portion of the relaxed buffer layer by flowing silicon and germanium precursors, a germanium concentration in the first portion of the relaxed buffer layer increasing as the first portion of the relaxed buffer layer is deposited;
- after depositing the first portion of the relaxed buffer layer, depositing a first strained transition layer by pausing flowing the germanium precursors;
- and
- after depositing the first strained transition layer, depositing a second portion of the relaxed buffer layer by resuming flowing the germanium precursors, a germanium concentration in the second portion of the relaxed buffer layer increasing as the second portion of the relaxed buffer layer is deposited.
A method of manufacturing a semiconductor workpiece, the method comprising:
- providing a substrate;
- depositing a first portion of a relaxed buffer layer on the substrate by flowing silicon precursors and germanium precursors while increasing a germanium concentration in the growing first portion of the relaxed buffer layer;
- after depositing the first portion of the relaxed buffer layer, pausing flowing the germanium precursors while continuing to flow the silicon precursors;
- and
- after pausing flowing the germanium precursors, depositing a second portion of the relaxed buffer layer by resuming flowing the germanium precursors and increasing a germanium concentration in the growing second portion of the relaxed buffer layer.
Dependencies are inferred from the claim text.