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US 7,608,525 B2Granted
Method for manufacturing nitride semiconductor substrate
AssigneeNichia Corporation
InventorToru Takasone
Life of this patent
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Abstract
A method for manufacturing a nitride semiconductor substrate comprises the steps of: growing a first nitride semiconductor on a substrate, patterning the first nitride semiconductor to obtain a pattern surrounded by a plane equivalent to the (11-20) plane and having at least two concave portions that are similar in their planar shape, and growing a second nitride semiconductor layer, using a plane equivalent to the (11-20) plane in the first nitride semiconductor pattern as a growth nucleus.
Claims5
A nitride semiconductor substrate, comprising:
- a first nitride semiconductor pattern surrounded by a plane equivalent to the (11-20) plane, having at least two concave portions that are similar in their planar shape, and formed on a substrate, and
- a second nitride semiconductor layer formed on the first nitride semiconductor pattern.
A nitride semiconductor substrate, comprising:
- a first nitride semiconductor pattern formed on a substrate, and
- a second nitride semiconductor layer formed on the first nitride semiconductor pattern,
- wherein the first nitride semiconductor pattern is formed by a plurality of frames with a substantially regular triangular planar shape, regularly disposed so that adjacent frames share only their apexes.
Dependencies are inferred from the claim text.