Method of and system for forming SiC crystals having spatially uniform doping impurities

A physical vapor transport method comprising:

• (a) providing a growth chamber charged with source material and a seed crystal in spaced relation;
• (b) providing at least one capsule having an interior that is charged with dopant, wherein each capsule is comprised of a porous material having pores therein and each capsule includes, in addition to the pores of the porous material, at least one calibrated capillary of predetermined dimensions extending between the interior of the capsule and an exterior of the capsule;
• (c) installing each capsule in the growth chamber;
• and
• (d) through a growth reaction carried out in the growth chamber following step (c), forming a crystal on the seed crystal using the source material, wherein the formed crystal is doped with the dopant via controlled effusion of the dopant through the at least one capillary in each capsule.