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US 7,608,517 B2Granted
Method for forming capacitor of semiconductor device
AssigneeHynix Semiconductor Inc.
InventorKee Jeung Lee
Life of this patent
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Abstract
Disclosed is a method for forming a capacitor of a semiconductor device, which can secure wanted charging capacity and also improve leakage current characteristics. The method comprises the steps of: forming a storage electrode on a semiconductor substrate; forming a dielectric layer formed of Ti(1-x)TbxO on the storage electrode; and forming a plate electrode on the dielectric layer formed of Ti(1-x)TbxO.
Claims16
A method for forming a capacitor of a semiconductor device, which comprises the steps of:
- forming a storage electrode on a semiconductor substrate;
- forming a dielectric layer formed of Ti(1-x)TbxO on the storage electrode;
- forming a plate electrode on the dielectric layer formed of Ti(1-x)TbxO;
- and
- wherein the dielectric layer of Ti(1-x)TbxO is formed through one of pulsed chemical vapor deposition and low pressure chemical vapor deposition using an organic metallic composition containing Ti as a precursor and using an organic metallic composition containing Tb as a precursor, wherein the organic metallic composition containing Ti and the organic metallic composition containing Tb are each used as precursors during the same pulsed chemical vapor deposition or low pressure chemical vapor deposition process, and
- wherein the dielectric layer formed of Ti(1-x)TbxO is formed to have a mixed phase.
3 more elements
Dependencies are inferred from the claim text.