MSM binary switch memory

A metal/semiconductor/metal (MSM) binary switch crosspoint memory array comprising:

• a first plurality of bit lines parallely aligned in a first direction;
• a second plurality of MSM binary switch memory devices overlying each bit line;
• a third plurality of word lines parallely aligned in a second direction, orthogonal to the first direction, each word line connected to each bit line through a unique intervening MSM binary switch memory device;
• a memory resistor material overlying the bit line;
• a memory resistor top electrode overlying the memory resistor material;
• an MSM bottom electrode overlying the memory resistor top electrode;
• a semiconductor layer overlying the MSM bottom electrode;
• an MSM top electrode overlying the semiconductor layer at the intersection of the MSM binary switch memory device with the word line;
• and,
• wherein the memory resistor is a material selected from the group comprising Pr0.3Ca0.7MnO3 (PCMO), colossal magnetoresistive (CMR) film, transition metal oxides, Mott insulators, high-temperature super conductor (HTSC), and perovskite materials.

A metal/semiconductor/metal (MSM) binary switch memory device comprising:

• a memory resistor bottom electrode;
• a memory resistor material overlying the memory resistor bottom electrode;
• a memory resistor top electrode overlying the memory resistor material;
• an MSM bottom electrode overlying the memory resistor top electrode;
• a semiconductor layer overlying the MSM bottom electrode;
• an MSM top electrode overlying the semiconductor layer;
• and,
• wherein the memory resistor is a material selected from the group comprising Pr0.3Ca0.7MnO3 (PCMO), colossal magnetoresistive (CMR) film, transition metal oxides, Mott insulators, high-temperature super conductor (HTSC), and perovskite materials.