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US 7,608,504 B2Granted
Memory and manufacturing method thereof
AssigneeMacronix International Co., Ltd.
InventorsChien-Hung Liu, Shou-Wei Huang, Ying-Tso Chen, Yu-Tsung Lin
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Abstract
A memory is provided. The memory includes a substrate, a number of parallel bit lines, a number of parallel word lines and at least a oxide-nitride-oxide (ONO) structure. The bit lines are disposed in the substrate. The word lines are disposed on the substrate. The word lines are crossed with but not perpendicular to the bit lines. The ONO structure is disposed between the word lines and the substrate.
Claims5
A method of manufacturing a memory, comprising:
- providing a substrate;
- forming a first oxide-nitride-oxide (ONO) structure on the substrate, comprising:
- forming a bottom oxide layer on the substrate;
- forming a nitride layer on the bottom oxide layer;
- and
- forming a top oxide layer on the nitride layer;
- forming a plurality of bit lines in the substrate, and all of the bit lines disposed in parallel, and step of forming the bit lines further comprising:
- forming a patterned photo-resist layer on the first ONO structure, wherein the patterned photo-resist layer has a plurality of openings for exposing part of the first ONO structure;
- and
- forming the bit lines in the part of the substrate corresponding to the openings;
- and
- forming a plurality of word lines on the substrate, wherein the word lines are crossed with but not perpendicular to the bit lines.
9 more elements
Dependencies are inferred from the claim text.