Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device including a capacitor by depositing a capacitor dielectric film of said capacitor via an atomic layer deposition employing an organic source material containing one or more metallic element(s) selected from the group consisting of Zr, Hf, La and Y as a deposition gas, comprising:

• obtaining a boundary temperature T (degree C.), at which an increase in a film thickness of said capacitor dielectric film formed in every cycle of the atomic layer deposition is detected with an increase in a deposition temperature, on the basis of a correlation data of the deposition temperature in the atomic layer deposition employing said deposition gas with a film thickness of said capacitor dielectric film formed in every cycle of the atomic layer deposition at the deposition temperature;
• and
• depositing said capacitor dielectric film via the atomic layer deposition employing said deposition gas at a temperature within a range of from (T−20) (degree C.) to (T+20) (degree C.), wherein the deposition temperature is 250° C.±40° C.