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US 7,608,501 B2Granted
Technique for creating different mechanical strain by forming a contact etch stop layer stack having differently modified intrinsic stress
AssigneeAdvanced Micro Devices, Inc.
InventorsKai Frohberg, Carsten Peters, Matthias Schaller, Heike Salz
Life of this patent
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Abstract
By partially removing an etch stop layer prior to the formation of a first contact etch stop layer, a superior stress transfer mechanism may be provided in an integration scheme for generating strain by means of contact etch stop layers. Thus, a semiconductor device having different types of transistors may be provided, in which a high degree of metal silicide integrity as well as a highly efficient stress transfer mechanism is achieved.
Claims13
A method, comprising:
- selectively forming a first etch stop layer above only one of a first transistor element and a second transistor element;
- forming a first contact etch stop layer above said first and second transistor elements and said first etch stop layer after selectively forming said first etch stop layer above only one of said first and second transistor elements, said first contact etch stop layer having a first specified intrinsic stress;
- selectively removing a portion of said first contact etch stop layer formed above said one of said first transistor element and said second transistor element having formed thereabove said first etch stop layer by a selective etch process using said first etch stop layer as an etch stop;
- and
- forming a second contact etch stop layer above said first and second transistor elements, said second contact etch stop layer having a second intrinsic stress that differs from said first intrinsic stress.
2 more elements
A method, comprising:
- selectively forming a liner having a first type of intrinsic stress on a first transistor element while maintaining a second transistor element exposed;
- selectively forming a first etch stop layer on said liner while maintaining said second transistor element exposed;
- forming a first contact etch stop layer above said first and second transistor elements, said first contact etch stop layer having a second type of intrinsic stress other than said first type;
- selectively removing a portion of said first contact etch stop layer formed above said first transistor element using said first etch stop layer as an etch stop;
- removing said first etch stop layer;
- and
- forming a second contact etch stop layer above said first and second transistor elements, said second contact etch stop layer having said first type of intrinsic stress.
4 more elements
Dependencies are inferred from the claim text.