Method for manufacturing semiconductor device and heat treatment method

A method for manufacturing a semiconductor device, comprising:

• forming a semiconductor layer over a glass substrate;
• forming an insulating layer comprising a material selected from the group consisting of silicon oxide and silicon nitride over the semiconductor layer;
• forming an island-like light-absorbing layer over the semiconductor layer with the insulating layer interposed therebetween so that the island-like light-absorbing layer covers the semiconductor layer and end portions of the island-like light-absorbing layer are arranged outside of the semiconductor layer, said island-like light-absorbing layer being capable of absorbing a pulsed light;
• performing a heat treatment for the semiconductor layer and the insulating layer by selectively heating the light-absorbing layer through an irradiation of the pulsed light and by supplying oxygen to the insulating layer to oxidize a silicon cluster mixed into the insulating layer;
• and
• patterning the light-absorbing layer after performing the heat treatment.

A method for manufacturing a semiconductor device, comprising:

• forming a semiconductor layer over a glass substrate;
• forming an insulating layer comprising a material selected from the group consisting of silicon oxide and silicon nitride over the semiconductor layer;
• forming an island-like light-absorbing layer over the semiconductor layer with the insulating layer interposed therebetween so that the island-like light-absorbing layer covers the semiconductor layer and end portions of the island-like light-absorbing layer are arranged outside of the semiconductor layer, said island-like light-absorbing layer being capable of absorbing a pulsed light;
• performing a heat treatment for the semiconductor layer and the insulating layer by selectively heating the light-absorbing layer through an irradiation of the pulsed light to nitride a silicon cluster mixed into the insulating layer;
• and
• patterning the light-absorbing layer after performing the heat treatment.

A method for manufacturing a semiconductor device, comprising:

• forming a semiconductor layer over a glass substrate;
• forming an insulating layer comprising a material selected from the group consisting of silicon oxide and silicon nitride over the semiconductor layer;
• forming an island-like light-absorbing layer over the semiconductor layer with the insulating layer interposed therebetween so that the island-like light-absorbing layer covers the semiconductor layer and end portions of the island-like light-absorbing layer are arranged outside of the semiconductor layer, said island-like light-absorbing layer being capable of absorbing a pulsed light;
• performing a heat treatment for the semiconductor layer and the insulating layer by selectively heating the light-absorbing layer through an irradiation of the pulsed light and by supplying nitrogen to the insulating layer to nitride a silicon cluster mixed into the insulating layer;
• and
• patterning the light-absorbing layer after performing the heat treatment.