Method of fabricating a semiconductor device incorporating a semiconductor constructing body and an interconnecting layer which is connected to a ground layer via a vertical conducting portion

A semiconductor device fabrication method comprising:

• preparing a base member having a base plate and at least one metal foil, and separately arranging, on the base member, a plurality of semiconductor constructing bodies, each including a semiconductor substrate and a plurality of external connection electrodes formed on the semiconductor substrate;
• forming an insulating layer on the base member around the semiconductor constructing bodies;
• peeling the base plate from the metal foil, after the insulating layer is formed on the base member;
• forming a plating layer on a lower surface of the metal foil, after the base plate is peeled from the metal foil;
• forming at least one upper interconnecting layer on one of the semiconductor constructing bodies and the insulating layer, such that the upper interconnecting layer is electrically connected to one of the external connection electrodes of the semiconductor constructing body;
• forming a vertical conducting portion which electrically connects one surface of the base member and the upper interconnecting layer through at least the insulating layer;
• and
• cutting the insulating layer and base member between the semiconductor constructing bodies, thereby obtaining a plurality of semiconductor devices each including at least one semiconductor constructing body.

A semiconductor device fabrication method comprising:

• preparing a base member including a base plate and at least one metal foil formed at least at predetermined portions on the base plate, and separately arranging, on the at least one metal foil at the predetermined positions of the base plate, a plurality of semiconductor constructing bodies each including a semiconductor substrate and a plurality of external connection electrodes formed on the semiconductor substrate;
• forming an insulating layer on the at least one metal foil of the base member around the semiconductor constructing bodies so as to be attached to the at least one metal foil;
• removing the base plate from the metal foil while leaving the metal foil attached to the semiconductor constructing bodies and the insulating layer;
• forming at least one upper interconnecting layer on one of the semiconductor constructing bodies and the insulating layer, such that the upper interconnecting layer is electrically connected to one of the external connection electrodes of the semiconductor constructing body;
• forming a vertical conducting portion which electrically connects one surface of the base member and the upper interconnecting layer through at least the insulating layer;
• and
• cutting the insulating layer and base member between the semiconductor constructing bodies, thereby obtaining a plurality of semiconductor devices each including at least one semiconductor constructing body.

A semiconductor device fabrication method comprising:

• preparing a base member having a base plate and a metal foil formed on at least one surface of the base plate, and separately arranging, on the base member, a plurality of semiconductor constructing bodies each including a semiconductor substrate and a plurality of external connection electrodes formed on the semiconductor substrate;
• forming an insulating layer on the base member around the semiconductor constructing bodies;
• peeling the base plate from the metal foil after the insulating layer is formed on the base member around the semiconductor constructing bodies;
• forming at least one upper interconnecting layer on one of the semiconductor constructing bodies and the insulating layer, such that the upper interconnecting layer is electrically connected to one of the external connection bump electrodes of the semiconductor constructing body;
• forming a vertical conducting portion which electrically connects said given surface of the base member and the upper interconnecting layer through at least the insulating layer;
• and
• cutting the insulating layer and base member between the semiconductor-constructing bodies, thereby obtaining a plurality of semiconductor devices each including at least one semiconductor constructing body.