Information recording medium and method for producing the same

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:

• an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, and oxygen (O)),
• wherein the oxide-based material layer contains a material having a composition expressed by:
• M1Q2L3T2O100-Q2-T2(atom %)
• where M1 is a mixture of Zr and Hf, or Hf, L3 is at least one element selected from the group GL3, and Q2 and T2 satisfy 1.0≦Q2≦32.2, 1.7≦T2≦46.3, and 20<Q2+T2<60.

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:

• an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Si, and oxygen (O),
• wherein the oxide-based material layer contains a material having a composition expressed by:
• ZrQ3SiR1L2T3O100-Q3-R1-T3(atom %)
• where L2 is at least one element selected from the group GL2, and Q3, R1 and T3 satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60.

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:

• an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Cr, and oxygen (O),
• wherein the oxide-based material layer contains a material having a composition expressed by:
• ZrQ4CrUL2T4O100-Q4-U-T4(atom %)
• where L2 is at least one element selected from the group GL2, and Q4, U and T4 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, and 20<Q4+U+T4<60.

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:

• an oxide-based material layer consisting of at least one element selected from the group GL2 consisting of La, Al, Ga, In, Mg and Y, and Zr, and Cr, and oxygen (O),
• wherein the oxide-based material layer contains a material having a composition expressed by:
• ZrQ4CrUL2T4SiR2K2J2O100-Q4-U-T4-R2-J2(atom %)
• where L2 is at least one element selected from the group GL2, and K2 is at least one element selected from the group GK2 consisting of nitrogen (N) and carbon (C), and Q4, U, T4, R2 and J2 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, 0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85.

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:

• an oxide-based material layer consisting of at least one element selected from the group GL1 consisting of La, Ga and in, at least one element selected from the group GL consisting of Al, Mg and Y, and Zr, and oxygen (O)),
• wherein the oxide-based material layer contains a material having a composition expressed by:
• ZrQ1L1T1LT7O100-Q1-T1-T7(atom %)
• where L1 is at least one element selected from the group GL1, L is at least one element selected from the group GL, and Q1, T1 and T7 satisfy 1.0≦Q1≦32.2, 1.7≦T1+T7≦46.3, and 20<Q1+T1<60.

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:

• an oxide-based material layer consisting of at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, at least one element selected from the group GL4 consisting of Ce, Al and In, and M1 (where M1 is a mixture of Zr and Hf, or Hf), and oxygen (O),
• wherein the oxide-based material layer contains a material having a composition expressed by:
• M1Q2L3T5L4T6O100-Q2-T5-T6(atom %)
• where M1 is a mixture of Zr and Hf, or Hf, L3 is at least one element selected from the group GL3, L4 is at least one element selected from the group GL4, and Q2, T5 and T6 satisfy 1.0≦Q2≦32.2, 1.7≦T5+T6≦46.3, and 20<Q2+T5+T6<60.

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:

• an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg, and Y, and Si, and oxygen (O),
• wherein the oxide-based material layer contains a material having a composition expressed by:
• M1Q3SiR1L3T3O100-Q3-R1-T3(atom %)
• where L3 is at least one element selected from the group GL3, and Q3, R1 and T3 satisfy 0<Q3≦32, 0<R1≦32, 3<T3<43, and 20<Q3+R1+T3<60.

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:

• an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, and Cr, and oxygen (O),
• wherein the oxide-based material layer contains a material having a composition expressed by:
• M1Q4CrUL3T4O100-Q4-U-T4(atom %)
• where L3 is at least one element selected from the group GL3, and Q4, U and T4 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, and 20<Q4+U+T4<60.

An information recording medium that allows at least one of recording and reproduction of information by irradiation of light or application of electric energy, comprising:

• an oxide-based material layer consisting of M1 (where M1 is a mixture of Zr and Hf, or Hf), at least one element selected from the group GL3 consisting of La, Ga, Mg and Y, and Cr, and oxygen (O),
• wherein the oxide-based material layer contains a material having a composition expressed by:
• M1Q4CrUL3T4SiR2K2J2O100-Q4-U-T4-R2-J2(atom %)
• where L3 is at least one element selected from the group GL3, and K2 is at least one element selected from the group GK2 consisting of nitrogen (N) and carbon (C), and Q4, U, T4, R2 and J2 satisfy 0<Q4≦32, 0<U≦25, 0<T4≦40, 0<R2≦30, 0<J2≦40, and 25<Q4+U+T4+R2+J2<85.