Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings

The combination of:

• a substrate having a surface;
• and
• a cured anti-reflective layer adjacent said surface, said anti-reflective layer being formed from a composition comprising a thermal crosslinking agent and a polymer dissolved or dispersed in a solvent system, said polymer being a copolymer of a compound having the formula
• and a compound having the formula
• wherein:
• each R is individually selected from the group consisting of —OH, —NH2, hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH2, and at least one R on each ring of (I) being —OH;
• and
• L is selected from the group consisting of —SO2— and —CR′2—, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX3, where each X is individually selected from the group consisting of the halogens,
• wherein said layer absorbs at least about 90% of light having a wavelength of about 248 nm at a thickness of about 40 nm.

A method of using a composition in photolithographic processes, said method comprising the steps of:

• applying a quantity of a composition to a substrate;
• and
• heating said composition to induce crosslinking and form a cured layer thereon, said composition comprising a thermal crosslinking agent and a polymer dissolved or dispersed in a solvent system, said polymer being a copolymer of a compound having the formula
• and a compound having the formula
• wherein:
• each R is individually selected from the group consisting of —OH, —NH2, hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH2;
• and
• L selected from the group consisting of —SO2— and —CR′2—, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX3, where each X is individually selected from the group consisting of the halogens,
• said cured layer absorbing at least about 90% of light having a wavelength of about 248 nm at a thickness of about 40 nm.

The combination of:

• a substrate having a surface;
• and
• an anti-reflective layer adjacent said surface, said anti-reflective layer being formed from a composition comprising a thermal crosslinking agent and a polymer dissolved or dispersed in a solvent system, said polymer being a copolymer of a compound having the formula
• and a compound having the formula
• wherein:
• each R is individually selected from the group consisting of —OH, —NH2, hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH2 and at least one R on each ring of (I) being —OH;
• and
• L is selected from the group consisting of —SO2— and —CR′2—, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX3, where each X is individually selected from the group consisting of the halogens.

A method of using a composition in photolithographic processes, said method comprising the step of applying a quantity of a composition to a substrate to form a layer thereon and heating said composition to induce crosslinking, wherein:

• said composition comprises a thermal crosslinking agent and a polymer dissolved or dispersed in a solvent system, said polymer being a copolymer of a compound having the formula
• and a compound having the formula
• wherein:
• each R is individually selected from the group consisting of —OH, —NH2, hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH2;
• and
• L is selected from the group consisting of —SO2— and —CR′2—, where each R′ is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX3, where each X is individually selected from the group consisting of the halogens;
• said substrate has a hole formed therein, said hole being defined by a bottom wall and sidewalls;
• and
• said applying step comprises applying said composition to at least a portion of said bottom wall and sidewalls.

A method of using a composition in photolithographic processes, said method comprising the step of applying a quantity of a composition to a substrate to form a layer thereon and heating said composition to induce crosslinking, said composition comprising a thermal crosslinking agent and a polymer dissolved or dispersed in a solvent system, said polymer being a copolymer of a compound having the formula

• and a compound having the formula
• wherein:
• each R is individually selected from the group consisting of —OH, —NH2, hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH2;
• and
• L is selected from the group consisting of —SO2— and —CR′2—, where each R′is individually selected from the group consisting of hydrogen,aliphatics, phenyls, and —CX3, where each X is individually selected from the group consisting of the halogens,
• said layer absorbing at least about 90% of light having a wavelength of about 248 nm at a thickness of about 40 nm
• wherein said substrate has a hole formed therein, said hole being defined by a bottom wall and sidewalls, and said applying step comprises applying said composition to at least a portion of said bottom wall and sidewalls.

A method of using a composition in photolithographic processes, said method comprising the steps of:

• applying a quantity of a composition to a substrate to form a layer thereon, said composition comprising a thermal crosslinking agent a polymer dissolved or dispersed in a solvent system, said polymer being a copolymer of a compound having the formula
• and a compound having the formula
• wherein:
• each R is individually selected from the group consisting of —OH, —NH2, hydrogen, aliphatics, and phenyls, at least one R on each ring of (I) being —NH2;
• and
• L is selected from the group consisting of —SO2— and —CR′2—, where each R′is individually selected from the group consisting of hydrogen, aliphatics, phenyls, and —CX3—, where each X is individual selected form the group consisting of the halogens;
• curing said layer to form a cured layer;
• applying a photoresist to said cured layer;
• exposing at least a portion of said photoresist to activating radiation;
• and
• developing said exposed photoresist, wherein said developing step results in the removal of said cured layer from areas adjacent said exposed photoresist.