Back to results
US 7,608,192 B2Granted
Image sensor and method for fabricating the same
OwnerHee Jeen Kim, Han Seob Chainventors
Life of this patent
Estimating the term…
Abstract
An image sensor and a method for fabricating the same are provided. The image sensor includes a first conductive type substrate including a trench formed in a predetermined portion of the first conductive type substrate, a second conductive type impurity region for use in a photodiode, formed below a bottom surface of the trench in the first conductive type substrate, and a first conductive type epitaxial layer for use in the photodiode, buried in the trench.
Claims15
A method for fabricating an image sensor comprising:
- preparing a first conductive substrate;
- forming first trenches in the first conductive substrate to define an active region and device isolation regions;
- forming a gate electrode over the active region of the first conductive substrate;
- forming a second conductive impurity region in the active region of the first conductive substrate;
- forming a floating diffusion region on one side of the gate electrode in the active region of the first conductive substrate;
- etching a predetermined portion of the second conductive impurity region and a predetermined portion of the active region of the first conductive substrate to form a second trench between the gate electrode and the first trench, wherein the first trenches are deeper than the second trench;
- and
- burying a first conductive epitaxial layer in the second trench by in-situ doping first conductive impurities while growing the first conductive epitaxial layer, wherein the first conductive epitaxial layer includes one of Si and SiGe.
5 more elements
A method for fabricating an image sensor comprising:
- preparing a first conductive substrate;
- forming first trenches in the first conductive substrate to define an active region and device isolation regions;
- forming a gate electrode over the active region of the first conductive substrate;
- forming a second conductive impurity region in the active region of the first conductive substrate;
- forming spacers on sidewalls of the gate electrode;
- forming a floating diffusion region on one side of the gate electrode in the active region of the first conductive substrate;
- forming a mask pattern by employing a chemical vapor deposition (CVD) method to expose a predetermined portion of the second conductive impurity region and a predetermined portion of the active region of the first conductive substrate;
- and
- forming a first conductive epitaxial layer over the exposed portion of the second conductive impurity region and the first conductive substrate by in-situ doping first conductive impurities while growing the first conductive epitaxial layer, wherein the first conductive epitaxial layer includes one of Si and SiGe.
6 more elements
Dependencies are inferred from the claim text.