Crystallization apparatus and crystallization method

A crystallization apparatus comprising an illumination system which illuminates a phase shifter having at least one phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film,

• wherein the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion, and an area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees, and
• the phase shifter has a first phase shift portion at which even-numbered first phase shift lines intersect and a second phase shift portion at which even-numbered second phase shift lines intersect, and a plurality of first phase shift portions and a plurality of second phase shift portions are alternately arranged.

A crystallization apparatus comprising an illumination system which illuminates a phase shifter having at least one phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film,

• wherein the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion, and an area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees, and
• the illumination system has an outgoing radiation pupil having a shape that a dimension along one direction and a dimension along the other direction are substantially different from each other.

A crystallization apparatus comprising an illumination system which illuminates a phase shifter having at least one phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film,

• wherein the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion, and an area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees, and
• further comprising an image forming optical system arranged on an optical axis between the polycrystal semiconductor film or the amorphous semiconductor film and the phase shifter, and
• wherein the polycrystal semiconductor film or the amorphous semiconductor film is set apart from a surface optical conjugate with the phase shifter by a predetermined distance along an optical axis of the image forming optical system.

A crystallization apparatus which forms a crystallized semiconductor film by irradiating a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution,

• wherein the predetermined light intensity distribution has an inverse peak point with a light intensity lower than that at the periphery and has two or more trough lines which extend from the inverse peak point toward the periphery and have a lower change gradient of a light intensity than that at the periphery, and
• the light intensity distribution along each of the trough lines has an inflection point.

A crystallization method which illuminates a phase shifter, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution that a light intensity is minimum in an area corresponding to a phase shift portion of the phase shifter, thereby generating a crystallized semiconductor film,

• wherein the method uses the phase shifter which has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion, an area on one side and an area on the other side of each phase shift line having a phase difference of approximately 180 degrees,
• an image forming optical system is arranged on a light path between the polycrystal semiconductor film or the amorphous semiconductor film and the phase shifter, and
• a surface of the polycrystal semiconductor film or the amorphous semiconductor film being set apart from a plane optically conjugate with the phase shifter by a predetermined distance along an optical axis of the image forming optical system.

A phase shifter which has four or more even-numbered phase shift lines which intersect at a point constituting a phase shift portion, wherein respective two adjacent areas with different phases which define each phase shift line therebetween have a phase difference of approximately 180 degrees, and

• wherein six or more triangular areas including said areas are arranged so as to be adjacent to each other with one apex in common.

A phase shifter which has four or more even-numbered phase shift lines which intersect at a point constituting a phase shift portion, wherein respective two adjacent areas with different phases which define each phase shift line therebetween have a phase difference of approximately 180 degrees, and

• further comprising a first phase shift portion at which even-numbered first phase shift lines intersect and a second phase shift portion at which even-numbered second phase shift lines intersect, wherein a plurality of first phase shift portions and a plurality of second phase shift portions are alternately arranged.