Method and apparatus for performing metalization in an integrated circuit process

A metallization apparatus for forming a rhombic reverse fill pattern in a metal element of an integrated circuit (IC), the apparatus comprising:

• a memory device;
• a processor, the processor being configured to perform a metallization algorithm of a rhombic reverse fill pattern, the metallization algorithm generating control signals for controlling a metallization process;
• a metallization machine, the metallization machine receiving the control signals generated by the processor and performing a metallization process that forms a reverse fill pattern in one or more metal layers of the IC, the reverse fill pattern including a layer of metal having slots formed therein, each slot being substantially rhombic in shape, and wherein the reverse fill pattern meets a target metal density.

A automated method for designing a rhombic reverse fill pattern for a metal layer of an integrated circuit (IC), the automated method comprising:

• with at least one of software and hardware, selecting a size value and a spacing distance value for rhombic slots of a rhombic reverse fill pattern to meet a target metal density;
• and
• with a computer aided design tool, generating a rhombic reverse fill pattern design for a metal element of the IC using the selected size and spacing distance values, the reverse fill pattern design including a layer of metal having the rhombic slots formed therein, each rhombic slot being substantially rhombic in shape and having a size corresponding substantially to the selected size value, and wherein adjacent rhombic slots are separated by substantially the selected spacing distance.

A automated method for forming a rhombic reverse fill pattern in a metal layer of an integrated circuit (IC), the automated method comprising:

• receiving a rhombic reverse fill pattern design that meets a target metal density with one of a mask pattern creation system and a metallization system;
• and
• forming a rhombic reverse fill pattern in a metal layer of the IC having the rhombic reverse fill pattern design with a metallization system, the rhombic reverse fill pattern including a layer of metal having slots formed therein, each slot being substantially rhombic in shape, the metal layer having the substantially rhombic slots formed therein comprising a metal element of the IC.

A computer program for controlling a metallization process to form a rhombic reverse fill pattern in one or more metal layers of an integrated circuit, the rhombic reverse fill pattern comprising a layer of metal having slots formed therein, the computer program comprising instructions for execution by a processor, the instructions being stored on a computer-readable medium, the computer program comprising:

• instructions for receiving a rhombic reverse fill pattern design, the rhombic reverse fill pattern design including a size value corresponding to the size of each slot and a spacing distance value corresponding to a spacing distance between adjacent slots, wherein each slot is substantially rhombic in shape;
• and
• instructions for generating control signals for controlling a metallization machine to cause the metallization machine to form a substantially rhombic reverse fill pattern having the received rhombic reverse fill pattern design in one or more metal layers of the integrated circuit.

An integrated circuit (IC) device having at least one metal element that has a substantially rhombic reverse fill pattern, the substantially rhombic reverse fill pattern including a layer of metal having slots formed therein, each slot being substantially rhombic in shape.

An integrated circuit (IC) device having at least one metal element that has a substantially rhombic reverse fill pattern, the substantially rhombic reverse fill pattern including a layer of metal having slots formed therein, each slot being substantially rhombic in shape, and wherein the substantially rhombic reverse fill pattern meets a target metal density.

An integrated circuit (IC) device having at least one metal element that has a substantially rhombic reverse fill pattern, the substantially rhombic reverse fill pattern including a layer of metal having slots formed therein, each slot being substantially rhombic in shape, and wherein the substantially rhombic reverse fill pattern meets a target metal density without increasing electromigration (EM) in the metal element.

An integrated circuit (IC) device having at least one metal element that has a substantially rhombic reverse fill pattern, the substantially rhombic reverse fill pattern including a layer of metal having slots formed therein, each slot being substantially rhombic in shape, and wherein the substantially rhombic reverse fill pattern meets a target metal density without increasing IR drop.