Metal-insulator-metal capacitor and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsLian-Hua Shih, Yi-Ching Wu, Jiann-Fu Chen, Ming-Te Chen, Chin-Jen Cheng
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Abstract
A metal-insulator-metal (MIM) capacitor that includes a silicon nitride (SiN) dielectric film is disclosed. The MIM capacitor includes a bottom electrode, a top electrode and a dielectric layer positioned between the bottom electrode and the top electrode. The dielectric layer includes a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds. A ratio of silicon-hydrogen bonds to nitride-hydrogen bonds is equal to or smaller than 0.5. Accordingly, the nitrogen-rich and compressive silicon nitride film can improve the breakdown voltage of the MIM capacitor.
Claims10
A metal-insulator-metal (MIM) capacitor, comprising:
- a bottom electrode;
- a top electrode;
- and
- a dielectric layer positioned between the bottom electrode and the top electrode, comprising a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds, a ratio of silicon-hydrogen bonds to nitride-hydrogen bonds being equal to or smaller than 0.5, wherein a chemical bond percentage of silicon-hydrogen bonds in the silicon nitride film is equal to or smaller than 2.38%.
A metal-insulator-metal (MIM) capacitor, comprising:
- a bottom electrode;
- a top electrode;
- and
- a dielectric layer positioned between the bottom electrode and the top electrode, comprising a silicon nitride film that has a plurality of silicon-hydrogen bonds and a plurality of nitride-hydrogen bonds, a ratio of silicon-hydrogen bonds to nitride-hydrogen bonds being equal to or smaller than 0.5, wherein a chemical bond percentage of nitride-hydrogen bonds in the silicon nitride film is equal to or larger than 14.34%.
Dependencies are inferred from the claim text.