Nickel alloy sputtering target and nickel alloy thin film
AssigneeNippon Mining & Metals Co., Ltd.
InventorsYasuhiro Yamakoshi, Ryo Suzuki
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AssigneeNippon Mining & Metals Co., Ltd.
InventorsYasuhiro Yamakoshi, Ryo Suzuki
Estimating the term…
The present invention relates to a nickel alloy sputtering target comprising 1 to 30 at % of Cu; 2 to 25 at % of at least one element selected from among V, Cr, Al, Si, Ti and Mo; remnant Ni and unavoidable impurities so as to inhibit the Sn diffusion between a solder bump and a substrate layer or a pad. Provided are a nickel alloy sputtering target and a nickel alloy thin film for forming a barrier layer having excellent wettability with the Pb-free Sn solder or Sn—Pb solder bump, and capable of inhibiting the diffusion of Sn being a soldering component and effectively preventing the reaction with the substrate layer upon forming a Pb-free Sn solder or Sn—Pb solder bump on a substrate such as a semiconductor wafer or electronic circuit or a substrate layer or pad of the wiring or electrode formed thereon.
A nickel alloy sputtering target for forming a film for preventing tin (Sn) diffusion, comprising a sputtering target body of a predetermined diameter and a predetermined thickness adapted to form a thin film via magnetron sputtering, said sputtering target body being made of a composition of 1 to 30 atomic percent of copper (Cu);
A nickel alloy thin film formed between a solder bump and a substrate layer or a pad, said nickel alloy thin film comprising 1 to 30 atomic percent of copper (Cu);
A nickel alloy sputtering target, consisting of:
Dependencies are inferred from the claim text.