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US 7,605,441 B2Granted
Semiconductor device
AssigneePanasonic Corporation
InventorsKazushi Nakazawa, Hiroaki Ueno, Manabu Yanagihara, Yasuhiro Uemoto, Tsuyoshi Tanaka
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Abstract
A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic electrode electrically connected to the second surface of the semiconductor layer. The semiconductor layer has, in at least the upper portion thereof, highly-resistive regions selectively formed to have a high resistance.
Claims23
A semiconductor device comprising:
- a first semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface;
- a Schottky electrode formed on the first surface of the first semiconductor layer;
- and
- an ohmic electrode electrically connected to the second surface of the first semiconductor layer,
- wherein the first semiconductor layer has, in at least the upper portion thereof, highly-resistive regions selectively formed to have a high resistance.
2 more elements
A semiconductor device comprising:
- a first semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface;
- a Schottky electrode formed on the first surface of the first semiconductor layer;
- and
- an ohmic electrode electrically connected to the second surface of the first semiconductor layer,
- wherein the first semiconductor layer has semiconductor regions selectively formed in at least the upper portion thereof and having a different conductivity type from the first semiconductor layer.
2 more elements
Dependencies are inferred from the claim text.