Flash memory device and fabricating method thereof
AssigneeDongbu HiTek Co., Ltd.
InventorSang Bum Lee
Life of this patent
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Abstract
A flash memory device includes a floating gate formed on a substrate, sidewall gates formed on sidewalls of the floating gate, an interlayer insulating layer formed the floating gate and the sidewall gates, and a control gate formed on the interlayer insulating layer. The fabricating method of a flash memory device includes forming a floating gate on a substrate, forming sidewall gates at sidewalls of the floating gate, forming an interlayer insulating layer on the floating gate and the sidewall gates, and forming a control gate on the interlayer insulating layer.
Claims14
A flash memory device comprising:
- a floating gate formed on a substrate;
- first sidewall gates formed on sidewalls of the floating gate;
- an interlayer insulating layer formed on the floating gate and the sidewall gates;
- a control gate formed on the interlayer insulating layer;
- trench insulating layers formed in the substrate to thereby define an active region therebetween;
- a selection gate formed on the trench insulating layers;
- and
- second sidewall pates formed at sidewalls of the selection gate.
A fabricating method of a flash memory device, comprising:
- forming trench insulating layers in a substrate for defining an active region;
- forming a floating gate on the substrate;
- forming a selection gate on the trench insulating layers;
- forming sidewall gates at sidewalls of the floating gate and sidewalls of the selection gate;
- forming an interlayer insulating layer on the floating gate and the sidewall gates;
- and
- forming a control gate on the interlayer insulating layer.
Dependencies are inferred from the claim text.