High voltage devices
AssigneeTaiwan Seminconductor Manufacturing Co., Ltd.
InventorsJiann-Tyng Tzeng, Li-Huan Zhu
Life of this patent
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Abstract
High voltage devices capable of preventing leakage current caused by inversion layer. In the high voltage device, a substrate comprises an active area formed therein, a source region and a drain region formed in the substrate, and a gate structure is formed on the active area to define a channel region in the substrate between the drain region and the source region, wherein the active area has at least one side extending along a direction perpendicular to the channel direction of the channel region, such that the gate structure without completely covering the extension.
Claims14
A high voltage device, comprising:
- a substrate comprising an active area of a first conductive type formed therein;
- a source region and a drain region of a second conductive type formed in the substrate, and
- a gate structure formed on the active area to define a channel region in the substrate between the drain region and the source region and having a longitudinal axis substantially parallel to the channel direction, wherein the active area has at least one extension extending along a first direction perpendicular to the channel direction of the channel region, the active area is within the gate structure and the at least one extension has a first portion which is exposed from the gate structure and a second portion which is not exposed, and the at least one extension has a width, the width is parallel to the channel direction and is shorter than the channel region.
A high voltage device, comprising:
- a substrate comprising an active area of a first conductive type formed therein;
- a source region and a drain region of a second conductive type formed in the substrate, and
- a gate structure formed on the active area to define a channel region in the substrate between the drain region and the source region and having a longitudinal axis substantially parallel to the channel direction, wherein the active area has a first side and at least one extension at a second side thereof wherein the first side and the at least one extension of the active region extends along a first direction perpendicular to the channel direction of the channel region, and the extended side is exposed from the gate structure, the active area is within the gate structure and the at least one extension has a first portion which is exposed from the gate structure and a second portion which is not exposed, and the at least one extension has a width, the width is parallel to the channel direction and is shorter than the channel region.
Dependencies are inferred from the claim text.