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US 7,605,400 B2Granted
Method for fabricating liquid crystal display device
AssigneeLG Display Co., Ltd.
InventorSeok Woo Lee
Life of this patent
Estimating the term…
Abstract
A thin film transistor including: an active layer on a substrate, the active layer having at least two unit channels; and source and drain electrodes on the active layer, wherein an interval D between each of the channels is larger than a unit channel width W.
Claims2
A liquid crystal display device, comprising:
- a liquid crystal display panel;
- and
- a liquid crystal driving device including first and second multi-channel thin film transistors wherein the first and second multi-channel thin film transistors respectively have an interval D between unit channels, a unit channel width W, and a unit channel length L, and
- wherein a W/L ratio of the first multi channel thin film transistor is larger than a W/L ratio of the second multi channel thin film transistor, and
- wherein an entire size of the first multi channel thin film transistors is larger than an entire size of the second multi channel thin film transistors when the first multi-channel thin film transistors have at least any one of a large interval D between each of unit channels and a small W/L ratio of the unit channel and the second multi-channel thin film transistors have at least any one of a small interval D between each of unit channels and a large W/L ratio of the unit channel,
- wherein the number of the unit channel of the first multi-channel thin film transistor is more than the number of the unit channel of the second multi-channel thin film transistor.
3 more elements
A liquid crystal display device, comprising:
- a liquid crystal display panel;
- and
- a liquid crystal driving device including first and second multi-channel thin film transistors wherein the first and second multi-channel thin film transistors respectively have an interval D between unit channels, a unit channel width W, and a unit channel length L, and
- wherein a W/L ratio of the first multi channel thin film transistor is larger than a W/L ratio of the second multi channel thin film transistor,
- wherein an entire size of the first multi channel thin film transistors is larger than an entire size of the second multi channel thin film transistors when the first multi-channel thin film transistors have at least any one of a large interval D between each of unit channels and a small W/L ratio of the unit channel and the second multi-channel thin film transistors have at least any one of a small interval D between each of unit channels and a large W/L ratio of the unit channel, and
- wherein the W/L ratio of the first multi-channel thin film transistor is larger than the W/L ratio of the second multi-channel thin film transistor and the interval between the unit channels of the first multi-channel thin film transistor is larger than the interval between the unit channels of the second multi-channel thin film transistor.
3 more elements
Dependencies are inferred from the claim text.