Thin film transistor
AssigneeSamsung Mobile Display Co., Ltd.
InventorsJong Yun Kim, Tae Wook Kang
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Abstract
Disclosed are a thin film transistor and a method for fabricating the same. The thin film transistor is capable of a fine current control. The thin film transistor includes a semiconductor layer comprising a channel; a gate electrode overlying the semiconductor layer; a source electrode connected to a first end of the semiconductor layer; a drain electrode connected to a second end of the semiconductor layer; and a conductive line connected to one of the source and drain electrodes. The conductive line is configured to generate a magnetic field penetrating through at least a portion of the semiconductor layer when an electrical current flows through the conductive line.
Claims23
A thin film transistor, comprising:
- a semiconductor layer comprising a channel;
- a gate electrode overlying the semiconductor layer;
- a source electrode connected to a first end of the semiconductor layer;
- a drain electrode connected to a second end of the semiconductor layer;
- and
- a conductive line connected to one of the source and drain electrodes, the conductive line comprising at least one portion that crosses the channel of the semiconductor layer at least twice, the conductive line being configured to generate a magnetic field penetrating through at least a portion of the channel of the semiconductor layer when an electrical current flows through the conductive line.
Dependencies are inferred from the claim text.