Method of manufacturing an electronic device
AssigneeNXP B.V.
InventorsYukiko Furukawa, Robertus Adrianus Maria Wolters
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Abstract
A method of manufacturing an electronic device is provided wherein an interconnect is made using 193 nm lithography. No deformation of the desired linewidth takes place in that during a plasma gas is used which dissociates in low-weight ions. The electronic device is particularly an integrated circuit.
Claims26
A method of manufacturing an electronic device comprising a plurality of electrical elements and an interconnect structure interconnecting said electrical elements according to a desired pattern, said structure containing vertical interconnects through at least one layer of dielectric material, in which method the provision of the vertical interconnects comprises the steps of:
- providing at least one layer of dielectric material onto an electrically conductive surface;
- providing a photoresist layer on the at least one layer of dielectric material and suitable for irradiation at a wavelength of at most 200 nm;
- irradiating the photoresist layer at a wavelength of at most 200 nm and developing the photoresist layer to produce a patterned photoresist mask;
- and
- patterning the layer of dielectric material using the patterned photoresist mask, characterized in that before patterning the layer of dielectric material a plasma ignition treatment is performed on the patterned photoresist mask with a plasma gas dissociating in ions with an atomic mass that is at most equal to that of CF.
A method of manufacturing an electronic device comprising a plurality of electrical elements and an interconnect structure interconnecting said electrical elements according to a desired pattern, said structure containing vertical interconnects through at least one layer of dielectric material, in which method the provision of the vertical interconnects comprises the steps of:
- providing a stack of layers of dielectric material onto an electrically conductive surface, wherein the stack of layers of dielectric material includes, in order on the electrically conductive surface, a first layer, a second layer, a third layer, and a fourth layer, and wherein the first and third layers include a polyarylene-based material, the second layer includes a porous MSQ-type material, and the fourth layer includes a spin-on glass material;
- providing a photoresist layer suitable for irradiation at a wavelength of at most 200 nm;
- irradiating the photoresist layer at a wavelength of at most 200 nm and developing the photoresist layer to produce a patterned photoresist mask;
- and
- patterning the layer of dielectric material using the patterned photoresist mask, characterized in that before patterning the layer of dielectric material a plasma ignition treatment is performed on the patterned photoresist mask with a plasma gas dissociating in ions with an atomic mass that is at most equal to that of CF.
A method of manufacturing an electronic device, the method comprising:
- forming a plurality of electrical elements;
- and
- forming an interconnect structure that interconnects said electrical elements according to a desired pattern, by
- providing stacked layers of dielectric material on an electrically conductive surface,
- providing a photoresist layer suitable for irradiation at a wavelength of at most 200 nm,
- irradiating the photoresist layer at a wavelength of at most 200 nm and developing the photoresist layer to produce a patterned photoresist mask,
- plasma ignition treating the patterned photoresist mask with a plasma gas dissociating in ions with an atomic mass that is at most equal to that of CF,
- patterning the layer of dielectric material using the treated photoresist mask, and
- forming vertical interconnects extending through at least one of the stacked layers of dielectric material.
Dependencies are inferred from the claim text.