Schottky barrier tunnel single electron transistor and method of manufacturing the same

A method of manufacturing a Schottky barrier tunnel single electron transistor (SB-SET), the method comprising:

• (a) sequentially forming an insulating layer and a semiconductor layer on a substrate;
• (b) patterning the semiconductor layer to define a channel region and source and drain regions, wherein the semiconductor layer comprises an extremely low impurity concentration of less than 1016 atoms/cm3;
• (c) forming a gate insulating layer and a gate electrode on the channel region;
• (d) forming a sidewall insulating layer at both sidewalls of the gate insulating layer and the gate electrode;
• (e) choosing a metal material to adjust a height of a resultant Schottky barrier at the source and drain regions;
• (f) forming and siliciding the chosen metal material to a predetermined thickness on the entire surface of the resultant structure to form the resultant Schottky barrier wherein the forming and siliciding step is used instead of impurity injection to form the resultant Schottky barrier;
• (g) forming an interlayer insulating layer pattern on the silicided entire structure to expose a portion of the gate electrode and portions of the source and drain regions;
• and
• (g) forming a metal interconnection on the exposed gate electrode and source and drain regions.