Semiconductor device and manufacturing method thereof

A method of manufacturing semiconductor devices from a semiconductor substrate having a plurality of integrated circuits formed in a primary side thereof, comprising:

• attaching a dicing tape to a first side of a supporting substrate that does not have any thinned regions or voids;
• forming voids along peripheral edges of supporting block regions in the supporting substrate so that only the supporting block regions themselves remain after the forming step, wherein the supporting block regions are located at positions that correspond to the integrated circuits of the semiconductor substrate, to thereby form a supporting member;
• attaching a second side of the supporting member opposite the first side to a semiconductor substrate having a plurality of integrated circuits formed in a primary surface thereof, wherein the supporting member is attached to a surface of the semiconductor substrate opposite to the primary side;
• cutting at least one of the semiconductor substrate and the supporting member along scribing lines that are located between the integrated circuits formed in the semiconductor substrate to form a plurality of supported semiconductor devices;
• and
• removing the supported semiconductor devices from the dicing tape.

A semiconductor device manufacturing method having a step of cutting a semiconductor substrate, on a primary side of which a plurality of integrated circuits are arrayed, along scribing lines extending lengthwise and widthwise on the semiconductor substrate to separate the semiconductor substrate into integrated circuit chips, the semiconductor device manufacturing method comprising:

• attaching a dicing tape to the back side of a plate of material which will become a supporting member and on which neither thinned regions nor voids have been formed;
• etching a part of the plate of material to develop void regions and thinned regions in the plate of material, to thereby form the supporting member, after the attaching step is performed;
• bonding a primary side of the supporting member to a back side of the semiconductor substrate which is opposite to a primary side upon which the integrated circuits are arrayed after the etching step has been performed;
• cutting at least one of the supporting member and the semiconductor substrate along the scribing lines to separate the semiconductor substrate into a plurality of supported integrated circuit chips, wherein the supporting member has a supporting block region located beneath each of the integrated circuits of the semiconductor substrate, a thinned region which is thinner than the supporting block regions and a void region which is an opening in the supporting member in at least a part of an outer peripheral region of each of the supporting block regions, the outer peripheral region located beneath the scribing lines;
• and
• removing the supported integrated circuit chips from the dicing tape after the cutting step has been performed.