Method of manufacturing a semiconductor device including separation by physical force

A manufacturing method of a semiconductor device comprising the steps of:

• forming a release layer over a first substrate;
• forming a transistor over the release layer;
• forming an insulating layer over the transistor;
• forming a first opening portion in the insulating layer and forming a first conductive layer electrically connected to a source region or a drain region of the transistor;
• forming a first resin layer over the insulating layer;
• forming a second resin layer over the first resin layer;
• forming a second opening portion so as to expose at least a part of the release layer;
• forming a layer comprising a conductive particle so as to be in contact with the first conductive layer;
• electrically connecting the first conductive layer to a second conductive layer provided over a second substrate with the layer comprising the conductive particle interposed therebetween by providing the second substrate over the first resin layer, the first resin layer being formed over the first substrate;
• and
• separating a stack including the transistor from the first substrate a by using the second substrate with physical force.

A manufacturing method of a semiconductor device comprising the steps of:

• forming a release layer over a first substrate;
• forming a transistor over the release layer;
• forming an insulating layer over the transistor;
• forming a first opening portion in the insulating layer and forming a first conductive layer electrically connected to a source region or a drain region of the transistor;
• forming a first resin layer over the insulating layer;
• forming a layer comprising a conductive particle so as to be in contact with the first conductive layer;
• forming a second opening portion so as to expose at least a part of the release layer;
• forming a second resin layer over a second substrate, the second substrate being provided with a second conductive layer;
• electrically connecting the first conductive layer to the second conductive layer with the second resin layer and the layer comprising the conductive particle interposed therebetween by providing the second substrate over the first resin layer, the first resin layer being formed over the first substrate;
• and
• separating a stack including the transistor from the first substrate by using the second substrate with physical force.

A manufacturing method of a semiconductor device comprising the steps of:

• forming a release layer over a first substrate;
• forming a transistor over the release layer;
• forming an insulating layer over the transistor;
• forming a first opening portion in the insulating layer and forming a first conductive layer electrically connected to a source region or a drain region of the transistor;
• forming a first resin layer over the insulating layer;
• forming a first layer comprising a first conductive particle so as to be in contact with the first conductive layer;
• forming a second opening portion so as to expose at least a part of the release layer;
• forming a second layer comprising a second conductive particle and a second resin layer over a second substrate, the second substrate being provided with a second conductive layer;
• electrically connecting the first conductive layer to the second conductive layer with the first layer comprising the first conductive particle, the second layer comprising the second conductive particle, and the second resin layer interposed therebetween by providing the second substrate over the first resin layer, the first resin layer being formed over the first substrate;
• and
• separating a stack including the transistor from the first by using the second substrate with physical force.