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US 7,605,031 B1Granted
Semiconductor device having strain-inducing substrate and fabrication methods thereof
AssigneeDSM Solutions, Inc.
InventorAshok K. Kapoor
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate that includes a substrate layer having a first composition of semiconductor material. A source region, drain region, and a channel region are formed in the substrate, with the drain region spaced apart from the source region and the gate region abutting the channel region. The channel region includes a channel layer having a second composition of semiconductor material. Additionally, the substrate layer abuts the channel layer and applies a stress to the channel region along a boundary between the substrate layer and the channel layer.
Claims19
A method for fabricating a semiconductor device, comprising:
- forming a semiconductor substrate having a substrate layer with a first composition of semiconductor material;
- forming a source region in the semiconductor substrate;
- forming a drain region in the semiconductor substrate spaced apart from the source region;
- forming a gate region in the semiconductor substrate;
- and
- forming a channel region in the semiconductor substrate abutting the gate region and having a channel layer with a second composition of semiconductor material, wherein the substrate layer abuts the channel layer and applies a stress to the channel layer along a boundary between the substrate layer and the channel layer;
- wherein:
- the substrate layer applies a first stress to a first surface of the channel region along a boundary between the channel region and the substrate;
- and
- forming the gate region includes forming a gate layer that applies a second stress to a second surface of the channel region along a boundary between the channel region and the gate region.
7 more elements
A method for fabricating a semiconductor device, comprising:
- forming a substrate layer in a semiconductor substrate, the substrate layer having a first composition of semiconductor material, the first composition of semiconductor material having a first lattice constant;
- forming a channel region in the semiconductor substrate having a second composition of semiconductor material, wherein the substrate layer abuts the channel region and applies a stress to the channel region along a boundary between the substrate layer and the channel region, the second composition of semiconductor material having a second lattice constant, the first lattice constant being different than the second lattice constant;
- and
- forming a gate region in the semiconductor substrate abutting the channel region, the gate region applying a tensile force to the channel region, wherein the tensile force stretches the surface of the channel region along the boundary between the channel region and the gate region.
1 more element
A method for fabricating a semiconductor device, comprising:
- forming a gate region in the semiconductor substrate, the gate region having a first composition of semiconductor material, the first composition of semiconductor material having a first lattice constant;
- forming a channel region in the semiconductor substrate having a second composition of semiconductor material, wherein the gate region abuts the channel region and applies a stress to the channel region along a boundary between the gate region and the channel region, the second composition of semiconductor material having a second lattice constant, the first lattice constant being different than the second lattice constant;
- and
- forming a sate layer in the gate region abutting the channel region, the gate layer having the first composition of semiconductor material, the gate layer applying a tensile force to the channel region, wherein the tensile force stretches the surface of the channel region along the boundary between the channel region and the gate layer.
1 more element
A method for fabricating a semiconductor device, comprising:
- forming a semiconductor substrate having a substrate layer with a first composition of semiconductor material;
- forming a source region in the semiconductor substrate;
- forming a drain region in the semiconductor substrate spaced apart from the source region;
- forming a gate region in the semiconductor substrate;
- and
- forming a channel region in the semiconductor substrate abutting the gate region and having a channel layer with a second composition of semiconductor material, wherein the substrate layer abuts the channel layer and applies a stress to the channel layer along a boundary between the substrate layer and the channel layer;
- wherein forming the gate region includes forming a gate region that applies a tensile force, wherein the tensile force stretches the surface of the channel region along the boundary between the channel region and the gate region.
4 more elements
A method for fabricating a semiconductor device, comprising:
- forming a substrate layer in a semiconductor substrate, the substrate layer having a first composition of semiconductor material, the first composition of semiconductor material having a first lattice constant;
- forming a channel region in the semiconductor substrate having a second composition of semiconductor material, wherein the substrate layer abuts the channel region and applies a first stress to the channel region along a boundary between the substrate layer and the channel region, the second composition of semiconductor material having a second lattice constant, the first lattice constant being different than the second lattice constant;
- and
- forming a gate region in the semiconductor substrate abutting the channel region, the gate region applying a second stress to a second surface of the channel region along a boundary between the channel region and the gate region.
1 more element
Dependencies are inferred from the claim text.