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US 7,605,013 B2Granted
Photo-detector and related methods
AssigneeNorthrop Grumman Corporation
InventorHenry C. Abbink
Life of this patent
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Abstract
An apparatus comprising at least one multilayer wafer which includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.
Claims6
A method of forming an apparatus including a plurality of photodiodes comprising:
- obtaining a multilayer wafer comprising at least a device layer separated from a handle layer by a barrier layer;
- modifying the device layer to form a plurality of photoconductive regions;
- separating the photoconductive regions by etching away the device layer between the photoconductive regions, wherein the etching step produces a separation of the photoconductive region wide enough to accommodate dicing by slicing or sawing without causing micro-fissures to extend into the separated photoconductive regions;
- and
- forming a first plurality of electrically conductive pads or traces on the photoconductive regions.
2 more elements
Dependencies are inferred from the claim text.