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US 7,604,911 B2Granted
Mask pattern for semiconductor device fabrication, method of forming the same, method for preparing coating, composition for fine pattern formation, and method of fabricating semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsMitsuhiro Hata, Jung-Hwan Hah, Hyun-Woo Kim, Sang-Gyun Woo
Life of this patent
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Abstract
A mask pattern for semiconductor device fabrication comprises a resist pattern formed on a semiconductor substrate, and an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer.
Claims24
A mask pattern for semiconductor device fabrication, which comprises:
- a resist pattern formed on a semiconductor substrate;
- and
- an interpolymer complex film formed on the resist pattern, wherein the interpolymer complex film includes a network formed by a hydrogen bond between a proton donor polymer and a proton acceptor polymer, wherein the proton acceptor comprises a first repeat unit, wherein the first repeat unit includes a monomer unit having an amido group, and wherein the proton donor polymer comprises a first repeat unit, wherein the first repeat unit is a maleic acid monomer unit having a carboxyl group or a sulfonic group.
Dependencies are inferred from the claim text.