Exposure mask, method of forming resist pattern and method of forming thin film pattern

Abstract

An exposure mask capable of improving resolution is provided. An exposure mask includes one slit-shaped main transmission region and three pairs of slit-shaped auxiliary transmission regions arranged in order in a direction perpendicular to the longitudinal direction of the main transmission region, each pair of auxiliary transmission regions facing each other with the main transmission region in between. Compared to the case where two or less pairs of auxiliary transmission regions are included, light intensity contrast becomes higher in an end portion in a slit width direction of the main transmission region by exposing and developing a resist film through the use of the exposure mask, so the exposed width of the resist film is narrowed.

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