Method for improved manufacturability and patterning of sub-wavelength contact hole mask

A method of generating a mask having a target pattern comprising a plurality of features to be imaged and optical proximity correction features, said method comprising the steps of:

• defining a set of process parameters to be utilized to image said mask;
• determining an interference map based on said process parameters and said target pattern;
• defining an area of influence which represents the area about a given feature in said target pattern in which scattering bars will be utilized in said mask;
• and
• disposing a scattering bar in said mask adjacent said given feature in a location indicated by said interference map, said disposing including determining whether said location is within said area of influence such that no scattering bar associated with said given feature is disposed outside said area of influence of said given feature.

A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate files corresponding to a mask having a target pattern comprising a plurality of features to be imaged and optical proximity correction features, said generation of said files comprising the steps of:

• defining a set of process parameters to be utilized to image said mask;
• determining an interference map based on said process parameters and said target pattern;
• defining an area of influence which represents the area about a given feature in said target pattern in which scattering bars will be utilized in said mask;
• and
• disposing a scattering bar in said mask adjacent said given feature in a location indicated by said interference map, said disposing including determining whether said location is within said area of influence such that no scattering bar associated with said given feature is disposed outside said area of influence of said given feature.

A device manufacturing method comprising the steps of:

• (a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;
• (b) providing a projection beam of radiation using an imaging system;
• (c) generating a mask having a plurality of feature, said mask utilized to endow the projection beam with a pattern in its cross-section;
• (d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material,
• wherein, in step (c), said mask is formed by a method comprising the steps of:
• defining a set of process parameters to be utilized to image said mask;
• determining an interference map based on said process parameters and a target pattern;
• defining an area of influence which represents the area about a given feature in said target pattern in which scattering bars will be utilized in said mask;
• and
• disposing a scattering bar in said mask adjacent said given feature in a location indicated by said interference map, said disposing including determining whether said location is within said area of influence such that no scattering bar associated with said given feature is disposed outside said area of influence of said given feature.