Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography (1XMASK)

A mask for a nanoprint lithographic process, comprising:

• a translucent material that transfers a pattern from the mask to a substrate when placed in physical contact with the substrate or when placed against the substrate with a predetermined low pressure applied there between;
• one or more three-dimensional features comprising one or more vertical sidewalls;
• an absorbing material deposited upon one or more of the vertical sidewalls so that light incident on an upper surface of the translucent material will be absorbed by the absorbing material, resulting in light blocking features such that upon the transfer of the pattern, the substrate comprises features which directly correspond to areas of the absorbing material deposited on the vertical sidewalls;
• and
• one or more horizontal surfaces, formed upon one or more of the three-dimensional features, that allow light rays to exit a lower surface of the substrate unobstructed by the absorbing material.