Method for fabricating semiconductor device

A method for fabricating a semiconductor device, comprising:

• loading a wafer into a chamber including vertical sidewalls and a curved ceramic dome coated with a material having etch tolerance against a plasma, wherein the material is yttrium oxide or diyttrium trioxide;
• etching a gate structure formed on the wafer, thereby generating etch remnants;
• and removing the etch remnants by:
• using a gas of SF6 as a main etch gas, and
• performing a recovery process,
• wherein the vertical sidewalls and the curved ceramic dome are uniformly cleaned using a multi-step cleaning process including a plurality of steps in which the removing of the etch remnants on the curved ceramic dome is performed at pressures lower than that on the vertical sidewalls,
• wherein the removing of the etch remnants is performed under a source power of approximately 1,600 W supplied to an antenna coil and different pressures ranging from approximately 3 mTorr to approximately 90 mTorr,
• wherein the sidewalls are cleaned from positions progressing along the vertical sidewalls in multiple steps, and wherein the chamber pressure is reduced in each of the multiple steps.