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US 7,598,575 B1Granted
Semiconductor die with reduced RF attenuation
AssigneeNational Semiconductor Corporation
InventorsJeffrey A. Babcock, Yongseon Koh
Life of this patent
Estimating the term…
Abstract
The attenuation of an RF signal on a metal trace in a semiconductor die is substantially reduced by utilizing a number of RF blocking structures that lie on the surface of the substrate directly below the metal trace that carries the RF signal. The RF blocking structures include an isolation ring, and one or more doped regions that are formed inside the isolation ring.
Claims22
A semiconductor die comprising:
- a substrate material of a first conductivity type;
- a number of spaced-apart blocking structures, each blocking structure having:
- an isolation ring formed in the substrate material;
- a floating well of a second conductivity type formed in the substrate material, the isolation ring laterally surrounding the floating well;
- and
- a space-charge depletion region extending along a junction between the substrate material and the floating well;
- a semiconductor material of the second conductivity type, the semiconductor material having a top surface, the substrate material touching the top surface of the semiconductor material;
- and
- a plurality of spaced-apart regions of the first conductivity type formed in the semiconductor material.
6 more elements
A semiconductor die comprising:
- a substrate material of a first conductivity type;
- a number of spaced-apart blocking structures, each blocking structure having:
- an isolation ring formed in the substrate material;
- a floating well of a second conductivity type formed in the substrate material, the isolation ring laterally surrounding the floating well;
- and
- a space-charge depletion region extending along a junction between the substrate material and the floating well;
- a semiconductor material of the second conductivity type, the semiconductor material having a top surface, the substrate material touching the top surface of the semiconductor material;
- and
- a grid of the first conductivity type formed in the semiconductor material.
6 more elements
A semiconductor die comprising:
- a first semiconductor region of a first conductivity type;
- and
- a second semiconductor region of a second conductivity type that touches the first semiconductor region, the first semiconductor region laterally surrounding the second semiconductor region, the second semiconductor region electrically floating, no portion of the second semiconductor region lying directly vertically below a region of the first conductivity type that is both connected to receive a substantially constant voltage and spaced apart from the first semiconductor region.
A semiconductor die comprising:
- a first semiconductor region of a first conductivity type;
- a plurality of second semiconductor regions of a second conductivity type that touch the first semiconductor region, the plurality of second semiconductor regions being spaced apart and arranged in rows and columns, each of the second semiconductor regions electrically floating, the first semiconductor region laterally surrounding the plurality of second semiconductor regions, no portion of a second semiconductor region of the plurality of second semiconductor regions lying directly vertically below a region of the first conductivity type that is both connected to receive a substantially constant voltage and spaced apart from the first semiconductor region.
Dependencies are inferred from the claim text.