CMOS image sensor and method for fabricating the same
AssigneeDongbuAnam Semiconductor Inc.
InventorIn Su Kim
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Abstract
A complementary metal-oxide semiconductor (CMOS) image sensor and a method for fabricating the same are disclosed. The image sensor includes a sub-layer having a photodiode and a plurality of transistors formed thereon, a pad insulating layer formed on the sub-layer, a micro-lens formed on the pad insulating layer, the micro-lens including a first insulating layer having an uneven surface and a second insulating layer covering upper and side surfaces of a projected portion of the first insulating layer to form a dome shape, and a planarization layer formed on the micro-lens, and a color filter formed on the planarization layer.
Claims3
A complementary metal-oxide semiconductor (CMOS) image sensor, comprising:
- a sub-layer having a photodiode and a plurality of transistors formed thereon;
- a pad insulating layer formed on the sub-layer;
- a micro-lens formed on the pad insulating layer, the micro-lens including a first insulating layer having a projected rectangular surface and a second insulating layer covering upper and side surfaces of the projected rectangular surface of the first insulating layer to form a dome shape;
- a planarization layer formed on the micro-lens;
- and
- a color filter formed on the planarization layer.
Dependencies are inferred from the claim text.