Semiconductor device and field-effect transistor
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorToshihiko Shiga
Life of this patent
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Abstract
A Schottky electrode including a WNx layer on an n-type GaN layer. A crystal plane of the n-type GaN layer is in contact with a crystal plane of the WNx layer. The crystal plane of the n-type GaN layer is a (0001)-plane, and the crystal plane of the WNx layer is (111)-oriented. The WNx layer may be an electrode layer having an NaCl-type structure including at least one metal selected from the group consisting of zirconium, hafnium, niobium, tantalum, molybdenum and tungsten, and at least one element selected from nitrogen and carbon. Further, the lattice constant of the electrode layer is preferably 0.95 to 1.05 times the a-axis lattice constant of the n-type GaN layer, multiplied by 2(1/2).
Claims9
A semiconductor device comprising:
- an n-type nitride compound semiconductor;
- and
- a Schottky electrode on said n-type nitride compound semiconductor, wherein
- said Schottky electrode includes a first electrode layer on said n-type nitride compound semiconductor, said first electrode layer having an NaCl-type structure including at least one metal selected from the group consisting of zirconium, hafnium, niobium, tantalum, molybdenum and tungsten, and at least one element selected from nitrogen and carbon, and
- a crystal plane of said n-type nitride compound semiconductor is in contact with a crystal plane of said first electrode layer, said crystal plane of said n-type nitride compound semiconductor being a (0001) plane, and said crystal plane of said first electrode layer being (111)-oriented.
A semiconductor device comprising:
- a p-type nitride compound semiconductor;
- and
- an ohmic electrode on said p-type nitride compound semiconductor, wherein said ohmic electrode includes an electrode layer on said p-type nitride compound semiconductor, said electrode layer having an NaCl-type structure including a carbide of at least one metal selected from the group consisting of zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten.
A semiconductor device comprising:
- a p-type nitride compound semiconductor;
- and
- an ohmic electrode formed on said p-type nitride compound semiconductor, wherein
- said ohmic electrode includes an electrode layer on said p-type nitride compound semiconductor, said electrode layer having an NaCl-type structure including a nitride of at least one metal selected from the group consisting of zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten, and
- a crystal plane of said p-type nitride compound semiconductor is in contact with a crystal plane of said electrode layer, said crystal plane of said p-type nitride compound semiconductor being a (0001) plane, and said crystal plane of said electrode layer being (111)-oriented.
A semiconductor device comprising:
- a silicon carbide semiconductor;
- and
- an electrode on said silicon carbide semiconductor, wherein
- said electrode includes an electrode layer on said silicon carbide semiconductor, said electrode layer having an NaCl-type structure including a nitride of at least one metal selected from the group consisting of zirconium, hafnium, niobium, tantalum, molybdenum, and tungsten, and
- a crystal plane of said silicon carbide semiconductor is in contact with a crystal plane of said electrode layer, said crystal plane of said silicon carbide semiconductor being a (0001) plane, and said crystal plane of said electrode layer being (111)-oriented.
Dependencies are inferred from the claim text.