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US 7,598,539 B2Granted
Heterojunction bipolar transistor and method for making same
AssigneeInfineon Technologies AG
InventorDetlef Wilhelm
Life of this patent
Estimating the term…
Abstract
A heterojunction bipolar transistor: The transistor may a collector layer, a base layer and an emitter layer. The transistor may include a dielectric material being disposed over the base layer. The base layer may be a SiGe base layer.
Claims26
A heterojunction bipolar transistor, comprising:
- a collector layer;
- a dielectric stack including at least a first dielectric layer overlying said collector layer and a second dielectric layer overlying said first dielectric layer, said second dielectric layer being different from said first dielectric layer, said stack having an opening therethrough, said opening overlying said collector layer, said opening including a first portion through said first dielectric layer and a second portion through said second dielectric layer, said second portion of said opening being wider than said first portion of said opening;
- and
- a base layer having a first portion disposed within said first portion of said opening and a second portion disposed within said second portion of said opening.
1 more element
A heterojunction bipolar transistor, comprising:
- a collector layer;
- a first dielectric layer overlying said collector layer, said first dielectric layer having a first opening therethrough, said first opening overlying said collector layer;
- a second dielectric layer having a second opening therethrough, said second opening overlying said first opening, said second opening being wider than said first opening, said second dielectric layer being different from said first dielectric layer;
- a base layer having a first portion disposed within said first opening and a second portion disposed within said second opening;
- and
- an emitter layer overlying said base layer.
3 more elements
Dependencies are inferred from the claim text.