Thin film transistor with electrode adhesion layers

A thin film transistor, comprising:

• a substrate;
• a gate electrode formed on said substrate, said gate electrode being made of silver;
• a first adhesion layer formed to be disposed between said substrate and said gate electrode, wherein said first adhesion layer consists of a material selected from the group consisting of:
• tantalum (Ta), nickel (Ni), tungsten (W), cobalt (Co), magnesium (Mg), vanadium (V), tungsten nitride, tantalum nitride, tantalum silicide, tungsten silicide, titanium alloy, and combinations thereof;
• a gate insulating layer formed on said gate electrode;
• a second adhesion layer separately formed with respect to said first adhesion layer, and disposed between said gate electrode and said gate insulating layer;
• a semiconductor layer formed on said gate insulating layer;
• and
• a source electrode and a drain electrode formed on parts of said semiconductor layer.