Techniques for removal of photolithographic films

A method for manufacturing an integrated circuit device, the method comprising:

• positioning a substrate on a substrate support member of a first processing chamber, the first processing chamber is configured to automatically maintain the substrate support member at a first temperature, and the substrate support member includes at least three retractable pins capable of elevating the substrate from a surface of the substrate support member;
• maintaining the substrate support member at the first temperature;
• elevating the substrate away from the surface of the substrate support member using the at least three retractable pins, thereby reducing thermal heating of the substrate from the substrate support member;
• etching a photoresist layer overlying the substrate in an atmosphere that includes oxygen while the substrate is in an elevated position such that the substrate is away from the surface of the substrate support member during the etching of the photoresist layer;
• and
• etching an anti-reflective layer overlying the substrate to remove at least about 98% of the anti-reflective layer;
• wherein a temperature of the substrate during the elevating, etching the photoresist layer, and etching the anti-reflective layer remains less than a bake-in temperature of the anti-reflective layer to avoid densification of the anti-reflective layer, and
• the first temperature exceeds the bake-in temperature for the anti-reflective layer.