Method of fabricating static random access memory
AssigneeSamsung Electronics Co., Ltd.
InventorsChang-Hoon Lee, Sang-Jin Park, Won-Seok Yoo, Kong-Soo Lee
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Abstract
A method of fabricating a static random access memory device includes selectively removing an insulating film and growing a single crystalline silicon layer using selective epitaxy growth, the single crystalline silicon layer being grown in a portion from which the insulating film is removed; recessing the insulating film; and depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, such that the amorphous silicon layer partially surrounds a top surface and side surfaces of the single crystalline silicon layer.
Claims10
A method of fabricating a static random access memory (SRAM), the method comprising:
- selectively removing an insulating film;
- growing a single crystalline silicon layer using selective epitaxial growth, the single crystalline silicon layer grown in an area from which the insulating film is removed;
- recessing the insulating film to expose a portion of side surfaces of the single crystalline layer and to form a single crystalline silicon protrusion extending above a top surface of the insulating film;
- depositing an amorphous silicon layer on the single crystalline silicon layer and the insulating film, the amorphous silicon layer completely covering a top surface and exposed side surfaces of the single crystalline silicon layer, wherein a top surface of the amorphous silicon layer directly covering the side surfaces of the single crystalline silicon protrusion is higher than a top surface of the amorphous silicon covering the insulating film;
- and
- performing an annealing process on the amorphous silicon layer to crystalline the amorphous silicon layer by using the single crystalline silicon layer as a seed, wherein the increased height of the top surface of the amorphous silicon covering the side surfaces of the single crystalline silicon protrusion prevents a thinning phenomenon of the amorphous silicon around the side surfaces of the single crystalline silicon layer during the annealing process.
A method of fabricating a static random access memory (SRAM), the method comprising:
- forming a gate line on a semiconductor substrate;
- forming a sidewall on a side surface of the gate line;
- forming a first insulating film on a surface of the semiconductor substrate and on a surface of the gate line;
- forming a second insulating film on a surface of the first insulating film;
- etching the second insulating film and the first insulating film to form a contact region exposing the semiconductor substrate;
- growing a single crystalline silicon layer in the contact region;
- partially etching the second insulating film to reduce the height of the second insulating film relative to the single crystalline silicon layer;
- carrying out a pre-flow of silane (SiH4) on the second insulating film and the single crystalline silicon layer;
- depositing an amorphous silicon layer on the second insulating film, on a top surface of the single crystalline silicon layer, and on side surfaces of the single crystalline layer that are exposed by the partial etching of the second insulating film;
- and
- crystallizing the amorphous silicon layer by performing an annealing process on the amorphous silicon layer using the single crystalline silicon layer as a seed so that the crystallized silicon layer serves as channel silicon.
Dependencies are inferred from the claim text.