Method of producing a semiconductor device having an oxide film
AssigneeOki Semiconductor Co., Ltd.
InventorsYuki Saito, Yasutaka Kobayashi
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Abstract
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.
Claims11
A producing method of a semiconductor device comprising:
- forming a trapezoidal portion including a first oxide film which functions as a gate oxide film and a plurality of other films,
- wherein said first oxide film has a first peripheral region including an end face of said first oxide film, and a first central region surrounded by said first peripheral region;
- and
- adjusting a thermal treatment of said trapezoidal portion so that a film thickness of said first oxide film in said first peripheral region is thicker than a film thickness of said first oxide film in said first central region,
- wherein a length from the end face to a midpoint of the first central region of said first oxide film of said trapezoidal portion is L, and a length of said first peripheral region from the end face of said first oxide film is 2L/3.
Dependencies are inferred from the claim text.