Method for manufacturing semiconductor device including MIM capacitor

Abstract

A semiconductor device including a metal-insulator-metal (MIM) capacitor is manufactured such that a via for connecting upper and lower conductive layers is formed through an insulating interlayer after a silicon nitride layer is deposited as a thick layer on the insulating interlayer. This protects an edge of a MIM structure during an etching process that forms the via. In addition, a fluorine gas can be used in a gas stripping process to remove a polymer residue when stripping the photoresist used to form the via. The MIM capacitor has an insulator layer. The method of manufacturing the device includes forming an insulator layer of the MIM capacitor to a predetermined thickness on the insulating interlayer. The predetermined thickness is equal to the desired thickness plus an augmentation thickness, and the augmentation thickness is determined according to the stripping process for removing the photoresist pattern.

Dependencies are inferred from the claim text.